STB30NF20L Datasheet, PDF (7/14 Pages) STMicroelectronics – Very good manufacturing repeatability

STB30NF20L
Electrical characteristics
Figure 8.
VGS
12
10
8
Gate charge vs gate-source voltage Figure 9. Capacitance variations
VDD=160V
ID=30A
VDS
AM11237v1
VGS (V)
100
100
C
(pF)
VGS
100
1000
100
6
80
60
4
40
2
20
0
0
0
20
40
60 Qg(nC)
100
10
0.1
1
10
100
AM11238v1
Ciss
Coss
Crss
VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.2
ID=250µA
AM11239v1
RDS(on)
(norm)
2.5
AM11240v1
1.0
2.0
0.8
1.5
0.6
1.0
0.4
0.2
-100 -50 0 50 100 150 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
AM11241v1
TJ=-50°C
0.9
0.5
0
-100 -50 0 50 100 150 TJ(°C)
0.8
TJ=25°C
0.7
0.6
0.5
0.4
0
TJ=175°C
5
10
15
20 ISD(A)
Doc ID 022753 Rev 2
7/14