STB30NF20L Datasheet, PDF (1/14 Pages) STMicroelectronics – Very good manufacturing repeatability

STB30NF20L
N-channel 200 V, 0.065 Ω, 30 A STripFET™ Power MOSFET
in D²PAK package
Datasheet — production data
Features
Order code V_DSS R_DS(on) I_D
STB30NF20L 200 V 0.075 Ω 30 A
P_TOT
150 W
■ Gate charge minimized
■ 100% avalanche tested
■ Excellent figure of merit (R_DS* Q_g)
■ Very good manufacturing repeatability
■ Very low intrinsic capacitance
Applications
■ Automotive
Description
This N-channel enhancement mode Power
MOSFET benefits from the latest refinement of
STMicroelectronics’ unique “single feature size”
strip-based process, which decreases the critical
alignment steps to offer exceptional
manufacturing reproducibility. The result is a
transistor with extremely high packing density for
low on-resistance, rugged avalanche
characteristics and low gate charge.
TAB
3
1
D²PAK
Figure 1. Internal schematic diagram
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3
Table 1. Device summary
Order code
STB30NF20L
Marking
30NF20L
Package
D²PAK
!-V
Packaging
Tape and reel
March 2012
This is information on a product in full production.
Doc ID 022753 Rev 2
1/14
www.st.com
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