STB270N4F3_09 Datasheet, PDF (7/14 Pages) STMicroelectronics – N-channel 40 V, 1.6 mΩ, 160 A, D2PAK, I2PAK STripFET™ III Power MOSFET

STB270N4F3, STI270N4F3
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
Figure 12. Source-drain diode forward
characteristics
VSD (V)
AM04229v1
0.95
0.90
TJ=-50°C
0.85
0.80
0.75
0.70
0.65
TJ=25°C
TJ=175°C
0.60
0.55
0.50
0.45
0.40 _{0 20 40 60 80 100 120 140 160 180 ISD(A)}
Doc ID 13208 Rev 4
7/14