STB270N4F3_09 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 40 V, 1.6 mΩ, 160 A, D2PAK, I2PAK STripFET™ III Power MOSFET

STB270N4F3, STI270N4F3
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions Min
D²PAK
-
I_SD Source-drain current
I²PAK
-
I_SDM(1)
Source-drain current
(pulsed)
D²PAK
I²PAK
-
-
V_SD(2) Forward on voltage
I_SD=80 A, V_GS=0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=160 A,
di/dt = 100 A/µs,
-
V_DD=32 V, Tj=150 °C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Typ.
70
225
3.2
Max Unit
160 A
120 A
640 A
480 A
1.5 V
ns
nC
A
Doc ID 13208 Rev 4
5/14