STB18N65M5 Datasheet, PDF (7/18 Pages) STMicroelectronics – N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages

STB18N65M5, STD18N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
VGS
(V)
12
VDS
10
VDD=520V
ID=7.5A
AM12474v1
VDS
(V)
500
400
RDS(on)
(Ω)
0.24
0.23
0.22
VGS=10V
AM12475v1
8
0.21
300
6
0.2
200
0.19
4
0.18
2
100
0.17
0
0 5 10 15 20 25 30
0
Qg(nC)
0.16
0 2 4 6 8 10 12 14 ID(A)
Figure 10. Capacitance variations
C
(pF)
10000
1000
Figure 11. Output capacitance stored energy
AM12476v1
Eoss
(µJ)
AM12484v1
6
5
Ciss
4
100
Coss
10
Crss
1
0.1
1
10
100 VDS(V)
3
2
1
0
0
200
400
600
VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
1.00
AM12471v1
ID = 250 µA
VD_S = VG_S
RDS(on)
(norm)
2.1
1.9
1.7
VG_S= 10V
ID= 7.5 A
AM12483v1
1.5
0.90
1.3
1.1
0.80
0.9
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Doc ID 023446 Rev 1
7/18