STB18N65M5 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages

STB18N65M5, STD18N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
dv/dt ⁽¹⁾ Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. I_SD ≤ 15 A, di/dt ≤400 A/µs; V_DSPeak < V_(BR)DSS, V_DD = 400 V
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Value
D²PAK
DPAK
± 25
15
9.4
60
110
15
- 55 to 150
150
Value
D²PAK
DPAK
1.14
30
50
Table 4. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetetive or not repetetive
(pulse width limited by T_jmax )
Single pulse avalanche energy
E_{AS (starting TJ = 25 °C, ID= IAR; VDD=50 V)}
Value
4
210
Unit
V
A
A
A
W
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
Doc ID 023446 Rev 1
3/18