STB15N65M5 Datasheet, PDF (7/19 Pages) STMicroelectronics – Excellent switching performance

STB15N65M5, STD15N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
VGS
(V)
12
VDS
10
VDD=520V
ID=5.5A
AM15289v1
VDS
(V)
500
400
RDS(on)
(Ω)
0.35
0.33
VGS=10V
AM15293v1
8
300
0.31
6
200
0.29
4
2
100
0.27
0
0
0
5 10 15 20 25 Qg(nC)
0.25
0
2
4
6
8 10 ID(A)
Figure 10. Capacitance variations
C
(pF)
1000
100
10
1
0.1
1
10
100
Figure 11. Output capacitance stored energy
AM15290v1
Eoss
(µJ)
4
AM15291v1
3.5
Ciss
3
2.5
2
Coss
1.5
Crss
VDS(V)
1
0.5
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
ID = 250 µA
VDS = VGS
AM05459v2
RDS(on)
(norm)
2.1
1.9
VG_S= 10 V
ID= 5.5 A
AM05460v2
1.00
1.7
1.5
0.90
1.3
1.1
0.80
0.9
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Doc ID 023207 Rev 1
7/19