STB15N65M5 Datasheet, PDF (3/19 Pages) STMicroelectronics – Excellent switching performance

STB15N65M5, STD15N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
dv/dt ⁽¹⁾ Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. I_SD ≤ 11 A, di/dt ≤400 A/µs; V_DD = 400 V, V_DS(peak) < V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetetive or not repetetive
(pulse width limited by T_jmax )
E_AS
Single pulse avalanche energy (starting
T_J = 25 °C, I_D= I_AR; V_DD=50 V)
Value
± 25
11
6.9
44
85
15
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
°C
°C
Value
D²PAK
DPAK
1.47
30
50
Unit
°C/W
°C/W
Value
Unit
2.5
A
160
mJ
Doc ID 023207 Rev 1
3/19