PD84008-E Datasheet, PDF (7/15 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PD84008-E, PD84008S-E
Typical performance
Figure 6. DC output characteristics
6
Tamb = + 60 °C
5
4
3
2
1
0
0
2
4
6
8
10
12
V DS[V ]
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 5.5V
Vgs = 6.0V
Figure 7. Gain vs output power and
bias current
18
Freq = 870 MHz
17
Vdd = 7.5V
16
15
14
13
12
11
10
Idq = 100mA
Idq = 250mA
Idq = 350mA
Idq = 500mA
9
8
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Pout (W)
Figure 8. Gain and efficiency vs P_OUT
18
80
17
70
16
60
15
50
14
40
13
30
12
20
11
10
0
Gain
Eff
1234
10
Freq = 870 MHz
Vdd = 7.5V
0
5 6 7 8 9 10 11 12 13
Pout (W)
Figure 9. Pout and Id vs Vgs
12
3.0
11 Freq = 870 MHz
Vdd = 7.5V
10
Pin = 200 mW
2.5
9
8
2.0
7
6
1.5
5
4
1.0
3
2
0.5
1
Pout Id
0
0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Vgs (V)
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