PD84008-E Datasheet, PDF(4/15 Page) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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PD84008-E Datasheet, PDF (4/15 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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Electrical characteristics

PD84008-E, PD84008S-E

2.1

2.2

2.3

2.4

TCASE = +25 oC

Static

Table 4. Static

Symbol

IDSS

IGSS

VGS(Q)

VDS(ON)

CISS

COSS

CRSS

VGS = 0 V

VGS = 20 V

VDS = 10 V

VGS = 10 V

VGS = 0 V

Dynamic

Test conditions

VDS = 25 V

VDS = 0 V

ID = TBD mA

ID = 1 A

VDS = 7 V

f = 1 MHz

Min Typ Max Unit

1 ÂµA

TBD

0.27 0.31 V

2.2

Table 5. Dynamic

Symbol

Test conditions

P3dB VDD = 7.5 V, IDQ = 250 mA

f = 870 MHz

VDD = 7.5 V, IDQ = 250 mA, POUT = 2 W, f = 870 MHz

VDD = 7.5 V, IDQ = 250 mA, POUT = P3dB, f = 870 MHz

Load VDD = 9.5 V, IDQ = 250 mA, POUT = 15 W, f = 870 MHz

mismatch All phase angles

Min Typ Max Unit

8 9.5

13 16.2

55 65

20:1

VSWR

ESD protection characteristics

Table 6.

ESD protection characteristics

Test conditions

Human body model

Machine model

Class

Moisture sensitivity level

Table 7.

Moisture sensitivity level

Test methodology

J-STD-020B

Rating

MSL 3

4/15

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