AN3161 Datasheet, PDF (7/14 Pages) STMicroelectronics – Using the STGW35HF60WD advanced PT IGBT in parallel

AN3161
New advanced planar PT STGW35HF60WD
3
New advanced planar PT STGW35HF60WD
3.1
Notes on technology and V_CE(sat) grouping
An advanced PT IGBT has been introduced to enhance the previous 600 V, 35 A IGBT
STGW35NC60WD, tailored for high-frequency applications. From a technology point of
view, two main improvements have been implemented on this IGBT:
1. The innovative double-drift process which changed the doping profile
2. The advanced planar strip layout
Both factors allow the reduction of the effective resistance in the drift (N ¯) region and
significantly improve the dynamic performance, especially at high temperature. The
changes performed on the horizontal and vertical structure and their effect on this IGBT are
clearly shown in its datasheet: the new STGW35HF60WD shows a lower V_CE(sat) typical
value than the equivalent STGW35NC60WD, and its E_off max value (at I_C = 20 A,
T_J = 125 °C) is guaranteed as per the datasheet. Tests performed on a significant number of
STGW35HF60WD samples show that the static temperature coefficient (see Equation 2),
changes in relation to the absolute V_CE(sat) value, as shown in Figure 3.
Equation 2
V_CE(sat) ⋅ (T_J = 25°C) – V_CE(sat)(T_J = 125°C) ⁄ V_CE(sat)(T_J = 125°C)
Figure 3. Static V_CE(sat)(@20 A,15 V) derating for STGW35HF60WD
2.5
2.4 ^{"C" GROUP}
Δ≈15.5%
2.3
VCE(_sat) at 20 A, 25 °C
VCE(_sat) at 20 A, 125 °C
2.2
2.1 _{"B" GROUP}
2 _{Δ≈14.3%}
1.9
"A" GROUP
1.8
Δ≈13%
1.7
1.6
Δ≈ 6%
1.5
1.4
0
25
50
75
100
125
150
Tj (°C)
AM06442v1
Figure 3 also explains how the total V_CE(sat) population has been split to guarantee well-
balanced and reliable paralleling. The ∆ symbol beside group A, whose V_CE(sat) values
belong to the interval (1.68 V − 1.92 V [@20 A, 25 °C]), satisfies the equation:
Doc ID 17151 Rev 1
7/14