AN3161 Datasheet, PDF (1/14 Pages) STMicroelectronics – Using the STGW35HF60WD advanced PT IGBT in parallel

AN3161
Application note
Using the STGW35HF60WD advanced PT IGBT in parallel
Introduction
When two or more IGBTs are connected in parallel to improve the total efficiency in high
output power systems, special care is required to ensure that current sharing between the
devices is as equal as possible. Current sharing is mainly influenced by differences in IGBT
static parameters, circuitry layout (both driving and power) and thermal imbalances. All of
these elements must be considered, especially when PT (punch-through) IGBTs work in
parallel, due to their negative V_CE(sat) coefficient. In order to provide the most efficient IGBT
to the market while supporting reliable and easier paralleling for higher power level
applications, ST offers the STGW35HF60WD 35 A, 600 V ultra fast IGBT with V_CE(sat)
selection. This device is explained in greater detail in Section 3: New advanced planar PT
STGW35HF60WD.
May 2010
Doc ID 17151 Rev 1
1/14
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