M36WT864TF Datasheet, PDF (60/92 Pages) STMicroelectronics – 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product

M36WT864TF, M36WT864BF
Table 27. SRAM Write AC Characteristics
Symbol
Parameter
M36WT864TF/BF
Unit
70
t_AVAV
Write Cycle Time
Min
70
ns
t_AVBH
Address Valid to LBS, UBS High
Min
60
ns
t_AVBL
Address Valid to LBS, UBS Low
Min
0
ns
t_AVEH
Address Valid to Chip Enable High
Min
60
ns
t_AVEL
Address valid to Chip Enable Low
Min
0
ns
t_AVWH
Address Valid to Write Enable High
Min
60
ns
t_AVWL
Address Valid to Write Enable Low
Min
0
ns
t_BHAX
LBS, UBS High to Address Transition
Min
0
ns
t_BHDX
LBS, UBS High to Input Transition
Min
0
ns
t_BLBH
LBS, UBS Low to LBS, UBS High
Min
60
ns
t_BLEH
LBS, UBS Low to Chip Enable High
Min
60
ns
t_BLWH
LBS, UBS Low to Write Enable High
Min
60
ns
t_DVBH
Input Valid to LBS, UBS High
Min
30
ns
t_DVEH
Input Valid to Chip Enable High
Min
30
ns
t_DVWH
Input Valid to Write Enable High
Min
30
ns
t_EHAX
Chip Enable High to Address Transition
Min
0
ns
t_EHDX
Chip enable High to Input Transition
Min
0
ns
t_ELBH
Chip Enable Low to LBS, UBS High
Min
60
ns
t_ELEH
Chip Enable Low to Chip Enable High
Min
60
ns
t_ELWH
Chip Enable Low to Write Enable High
Min
60
ns
t_WHAX
Write Enable High to Address Transition
Min
0
ns
t_WHDX
Write Enable High to Input Transition
Min
0
ns
t_WHQX ⁽¹⁾ Write Enable High to Output Transition
Min
5
ns
t_WLBH
Write Enable Low to LBS, UBS High
Min
60
ns
t_WLEH
Write Enable Low to Chip Enable High
Min
60
ns
t_WLQZ ^(1,2,3) Write Enable Low to Output Hi-Z
Max
20
ns
t_WLWH Write Enable Low to Write Enable High
Min
50
ns
Note: 1. At any given temperature and voltage condition, t_WLQZ is less than t_WHQX for any given device.
2. These parameters are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. Tested initially and after any design or process changes that may affect these parameters.
60/92