M36WT864TF Datasheet, PDF (1/92 Pages) STMicroelectronics – 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product

M36WT864TF
M36WT864BF
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory
and 8 Mbit (512K x16) SRAM, Multiple Memory Product
PRODUCT PREVIEW
FEATURES SUMMARY
s SUPPLY VOLTAGE
– V_DDF = 1.65V to 2.2V
– V_DDS = V_DDQF = 2.7V to 3.3V
– V_PPF = 12V for Fast Program (optional)
s ACCESS TIME: 70, 85, 100ns
s LOW POWER CONSUMPTION
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36WT864TF: 8810h
– Bottom Device Code, M36WT864BF: 8811h
FLASH MEMORY
s PROGRAMMING TIME
– 8µs by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
s MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
s DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write operations
s BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
s SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
s COMMON FLASH INTERFACE (CFI)
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
SRAM
s 8 Mbit (512K x 16 bit)
s EQUAL CYCLE and ACCESS TIMES: 70ns
s LOW STANDBY CURRENT
s LOW V_DDS DATA RETENTION: 1.5V
s TRI-STATE COMMON I/O
s AUTOMATIC POWER DOWN
Figure 1. Packages
FBGA
Stacked LFBGA96 (ZA)
8 x 14mm
July 2002
This is preliminary information on a new product now in development. Details are subject to change without notice.
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