VND10N0613TR Datasheet, PDF (6/25 Pages) STMicroelectronics – OMNIFET fully autoprotected Power MOSFET

Electrical specifications
2
Electrical specifications
VND10N06 / VND10N06-1
2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V_DSn Drain-Source voltage (V_in = 0V)
Internally clamped
V
V_INn Input voltage
Internally clamped
V
I_in Input current
± 20
mA
I_Dn Drain current
Internally limited
A
I_Rn Reverse DC output current
- 15
A
Electrostatic discharge
V_{ESD (R = 1.5KΩ, C = 100pF)}
4000
V
P_tot Total dissipation at T_c = 25°C
35
W
T_j Operating junction temperature
Internally limited
°C
T_c Case operating temperature
Internally limited
°C
T_stg Storage temperature
- 55 to 150
°C
2.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Max. value
3.5
100
Unit
°C/W
°C/W
6/25