VND10N0613TR Datasheet, PDF (1/25 Pages) STMicroelectronics – OMNIFET fully autoprotected Power MOSFET

VND10N06
VND10N06-1
"OMNIFET"
fully autoprotected Power MOSFET
Features
Max on-state resistance (per ch.)
Current limitation (typ)
Drain-Source clamp voltage
R_DS(on)
I_lim
V_CLAMP
0.3Ω
10A
60V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Logic level input threshold
■ ESD protection
■ Schmitt trigger on input
■ High noise immunity
3
1
DPAK
TO-252
IPAK
TO-251
3
2
1
Description
The VND10N06 and VND10N06-1 are monolithic
devices designed in STMicroelectronics VIPower
M0-2 technology, intended for replacement of
standard Power MOSFETs in DC to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protect
the chip in harsh environments.
Table 1. Device summary
Package
DPAK
IPAK
Tube
VND10N06
VND10N06-1
Order codes
Tape and reel
VND10N06TR
September 2013
Rev 4
1/25
www.st.com
25