STL20DN10F7 Datasheet, PDF (6/14 Pages) STMicroelectronics – N-channel enhancement mode

Electrical characteristics
STL20DN10F7
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
ID
(A)
Operation in this area is
Limited by max RDS(on)
10
GIPG230120141152SA
100µs
1
Tj=150°C
0.1 _Tpcb=25°C
Sinlge
pulse
0.01
0.1
1
1ms
10ms
10
VDS(V)
Figure 3. Thermal impedance
K
δ=0.5
GIPG230120141201SA
0.2
0.1
10^-1
0.05
0.02
0.01
pcb
10^-2
Single pulse
10^-3
10^-5
10^-4 10^-3 10^-2 10^-1 10^{0 tp(s)}
Figure 4. Output characteristics
ID
GIPG200120141028FSR
(A)
VGS= 10 V
30
9V
8V
24
7V
18
12
6V
6
5V
0
0
2
4
6
8 VDS(V)
Figure 5. Transfer characteristics
ID
GIPG200120141040FSR
(A)
VDS= 9V
30
25
20
15
10
5
0
2
4
6
8
10 VGS(V)
Figure 6. Gate charge vs gate-source voltage
VGS
(V)
12
VDD= 50V
ID= 5A
GIPG200120141048FSR
Figure 7. Static drain-source on-resistance
RDS(on)
(mΩ)
GIPG210120141012FSR
61.00
VGS=10V
10
8
6
4
2
0
2
4
6
8
10 QG(nC)
60.00
59.00
58.00
57.00
56.00
0 0.5 ^{1 1.5 2} 2.5
ID(A)
6/14
DocID023935 Rev 3