STL130N6F7 Datasheet, PDF (6/14 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STL130N6F7
Figure 8: Capacitance variations
C
(pF)
GIPD280420151219FSR
Figure 9: Normalized gate threshold voltage vs
temperature
10000
f= 1MHz
Ciss
1000
100
Coss
Crss
10
0.1
1
10
VDS(V)
Figure 10: Normalized on-resistance vs
temperature
RDS(on)
(norm)
GIPD280420151227FSR
2.2
VGS= 10V
ID= 13A
1.8
1.4
1.0
0.6
0.2
-75 -25 25 75 125 175 Tj(°C)
Figure 11: Normalized V(BR)DSS vs
temperature
V(BR)DSS
(norm)
GIPD280420151232FSR
1.04
ID= 1mA
1.02
1.00
0.98
0.96
-75 -25 25 75 125 175 Tj(°C)
Figure 12: Source-drain diode forward characteristics
VSD
(V)
GIPD280420151236FSR
Tj= -55°C
0.9
0.8
Tj= 25°C
0.7
0.6
Tj= 175°C
0.5
5
10
15
20
25 ISD(A)
6/14
DocID027519 Rev 3