STL130N6F7 Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STL130N6F7
N-channel 60 V, 0.003 Ω typ., 130 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL130N6F7
VDS
60 V
RDS(on) max
0.0035 Ω
ID
130 A
 Among the lowest R_DS(on) on the market
 Excellent figure of merit (FoM)
 Low C_rss/C_iss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL130N6F7
Table 1: Device summary
Marking
Package
130N6F7
PowerFLAT^TM 5x6
Packaging
Tape and reel
June 2015
DocID027519 Rev 3
This is information on a product in full production.
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