STH140N8F7-2 Datasheet, PDF (6/15 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
Figure 8: Gate charge vs. gate-source voltage
VGS
(V)
12
10
8
6
4
2
0
0
20 40 60 80 100 _Qg(nC)
STH140N8F7-2
Figure 9: Capacitance variations
C
(pF)
8000
7000
6000
Ciss
5000
4000
3000
2000
1000
Coss
0
Crss
0 10 20 30 40 50 60 70 VDS(V)
Figure 10: Normalized gate threshold voltage
vs. temperature
VGS(th)
1.2
ID= 250µA
1
0.8
0.6
0.4
-75
-25 0 25
75 125 175 TJ(°C)
Figure 11: Normalized on resistance vs.
temperature
RDS(on)
VGS= 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-75
-25 0 25
75 125 175 TJ(°C)
Figure 12: Source-drain diode forward characteristics
VSD
1.1
TJ= -55°C
1
0.9
TJ= 25°C
0.8
TJ= 175°C
0.7
0.6
20 30 40 50 60 70 80 90 ID(A)
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DocID026821 Rev 2