STH140N8F7-2 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STH140N8F7-2
N-channel 80 V, 3.3 mΩ typ., 90 A STripFET™ F7 Power
MOSFET in a H2PAK-2 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STH140N8F7-2 80 V
4 mΩ
90 A 200 W
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code Marking Package Packaging
STH140N8F7-2 140N8F7 H²PAK-2
Tape and
reel
October 2014
DocID026821 Rev 2
This is information on a product in full production.
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