STGW35HF60WD Datasheet, PDF (6/12 Pages) STMicroelectronics – 35 A, 600 V ultra fast IGBT

Electrical characteristics
STGW35HF60WD
Figure 8.
V_GE ^1(V6)
Gate charge vs. gate-emitter
voltage
V_CC = 400 V
12
I_C = 20 A
8
4
0
0
30
60
90
120 Q_G 1(n5C0)
Figure 10. Switching losses vs temperature
E 4(µ5J0)
Figure 9. Capacitance variations
C5(0p0F0)
4000
f = 1 MHz
V_GE = 0
3000
C_ies
2000
1000
Coes
C_res
0
0
10
20
30
40 V_CE (5V0)
Figure 11. Switching losses vs. gate
resistance
E20(µ0J0)
400
350
E_ON
E_OFF
300
250
V_CE = 400 V, V_GE= 15 V
200
I_C = 20 A, R_G =10 Ω
1500
1000
500
E_OFF
E_ON
V_CE = 400 V, V_GE= 15 V
I_C = 20 A, T_J = 125 °C
150
25
50
75
100
T_J 1(°2C5)
Figure 12. Switching losses vs. collector
current
E10(µ0J0)
0
0
60
120
Figure 13. Turn-off SOA
180
R_g2(4Ω0)
1I_C0(0A0)
800
E_ON
600
E_OFF
400
200
V_CE = 400 V, V_GE = 15 V
R_G = 10 Ω, T_J = 125 °C
0
10
15
20
25
30
35 I_C 4(A0)
100
10
1
0.1
1
V_GE = 15 V, R_G = 10 Ω
T_C = 150 °C
10
100
V_C1_E0(0V0)
6/12
Doc ID 15592 Rev 5