STGW35HF60WD Datasheet, PDF (1/12 Pages) STMicroelectronics – 35 A, 600 V ultra fast IGBT

STGW35HF60WD
35 A, 600 V ultra fast IGBT
Features
■ Improved E_off at elevated temperature
■ Minimal tail current
■ Low conduction losses
■ V_CE(sat) classified for easy parallel connection
■ Ultra fast soft recovery antiparallel diode
Applications
■ Welding
■ High frequency converters
■ Power factor correction
Description
The STGW35HF60WD is based on a new
advanced planar technology concept to yield an
IGBT with more stable switching performance
(E_off) versus temperature, as well as lower
conduction losses. The device is tailored to high
switching frequency operation (over 100 kHz).
TO-247
3
2
1
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking⁽¹⁾
Package
Packaging
GW35HF60WDA
STGW35HF60WD
GW35HF60WDB
TO-247
Tube
GW35HF60WDC
1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification.
STMicroelectronics reserves the right to ship from any group according to production availability.
May 2010
Doc ID 15592 Rev 5
1/12
www.st.com
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