STEF12 Datasheet, PDF (6/20 Pages) STMicroelectronics – Electronic fuse for 12 V line

Electrical characteristics
4
Electrical characteristics
STEF12
V_CC = 12 V, V_EN = 3.3 V, C_I = 10 µF, C_O = 47 µF, T_J = 25 °C (unless otherwise specified).
Table 6. Electrical characteristics for STEF12
Symbol
Parameter
Test Conditions
Min.
Under/Overvoltage protection
V_Clamp
V_UVLO
V_Hyst
Output clamping voltage
Undervoltage lockout
UVLO hysteresis
V_CC = 18 V
Turn-on, voltage rising
13.8
7.7
Power MOSFET
t_dly
Delay time
R_DSon On-resistance
V_OFF Off state output voltage
I_D
Continuous current
Current limit
Enabling of chip to I_D = 100 mA
with a 1 A resistive load
(1)
35
- 40 °C < T_J < 125 °C ⁽²⁾
V_CC = 18 V, V_GS = 0, R_L = infinite
0.5in² pad, T_A = 25 °C ⁽¹⁾
Minimum copper, T_A = 80 °C
I_Short Short-circuit current limit
R_Limit = 22 Ω
3.3
I_Lim Overload current limit
R_Limit = 22 Ω
dv/dt circuit
dv/dt Output voltage ramp time
Enable/Fault
Enable to V_OUT = 11.7 V, No
C_dv/dt
0.5
V_IL
V_I(INT)
V_IH
V_I(MAX)
I_IL
I_I
Low level input voltage
Output disabled
Intermediate level input voltage Thermal fault, output disabled
High level input voltage
Output enabled
High state maximum voltage
Low level input current (sink)
High level leakage current for
external switch
V_Enable = 0 V
V_Enable = 3.3 V
Total numbers of chips that can
Maximum fan-out for fault signal be connected to this pin for
simultaneous shutdown
0.35
0.82
1.96
3.4
Total device
I_Bias Bias current
Device operational
Thermal shutdown
6/20
Doc ID 019056 Rev 3
Typ. Max. Unit
15 16.2 V
8.5
9.3
V
0.80
V
350
µs
53
70
mΩ
82
40
100 mV
3.6
A
1.7
4.4
5.5
A
4.4
A
0.9
2.6 ms
0.58 0.81 V
1.4 1.95 V
2.64 3.3 V
4.3
5.4
V
-10
-30 µA
1
µA
3 Units
1.5
2
mA
1