STD6N10 Datasheet, PDF (6/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD6N10
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
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