STD6N10 Datasheet, PDF (2/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD6N10
THERMAL DATA
R_thj-case
R_{thj- amb}
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
4.29
100
1.5
275
o_{C/ W}
o_{C/ W}
o_{C/ W}
o_C
AVALANCHE CHARACTERISTICS
Symb ol
IA R
E_AS
EAR
I_{A R}
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max, δ < 1%)
Single Pulse Avalanche Energy
(st arting T_j = 25 ^oC, I_D = I_AR, V_{D D} = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T_c = 100 ^oC, pulse width limited by T_j max, δ < 1%)
Max Value
6
20
5
4
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V_(BR)DSS Drain-source
Breakdown Voltage
I_D = 250 µA V_{G S} = 0
I_DSS
Zero Gate Voltage
V_DS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 ^oC
I_{G SS}
Gate-body Leakage
Current (V_{D S} = 0)
V_GS = ± 20 V
Min.
100
Typ.
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
Symb ol
V_{G S(th)}
RDS(on)
I_D(on)
Parameter
Test Conditions
Gate Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10V ID = 3 A
R esist anc e
On St ate Drain Current V_DS > I_{D( on)} x R_{D S(on) max}
V_GS = 10 V
Min.
2
Typ.
3
0. 35
Max.
4
0. 45
Unit
V
Ω
6
A
DYNAMIC
Symb ol
gfs (∗)
C_iss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 3 A
V_DS = 25 V f = 1 MHz V_{G S} = 0
Min.
1.2
Typ.
3
Max.
Unit
S
265 400
pF
65
90
pF
20
30
pF
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