|
STD20N06 Datasheet, PDF (6/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR | |||
|
◁ |
STD20N06
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
6/10
|
▷ |