STB20NK50Z_09 Datasheet, PDF (6/18 Pages) STMicroelectronics – N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

Electrical characteristics
STx20NK50Z
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 17 A, V_GS = 0
I_SD = 17 A,
di/dt = 100 A/µs
V_R = 100 V
(see Figure 21)
I_SD = 17 A,
di/dt = 100 A/µs
V_R = 100 V, Tj = 150 °C
(see Figure 21)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Min.
-
-
Typ.
Max. Unit
17 A
68 A
1.6 V
355
ns
- 3.90
µC
22
A
440
ns
- 5.72
µC
26
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BV_GSO Gate-source breakdown voltage Igs=± 1mA (open drain) 30
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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