STB20NK50Z_09 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

STx20NK50Z
2
Electrical characteristics
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D =1 mA, V_GS = 0
500
V
V_DS = max rating
V_DS = max rating, T_C = 125 °C
1 µA
50 µA
V_GS = ± 20 V
± 10 µA
V_DS = V_GS, I_D = 100 µA
3 3.75 4.5 V
V_GS = 10 V, I_D = 8.5 A
0.23 0.27 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾ Forward transconductance V_DS = 15 V, I_D = 8.5 A
- 13
S
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
V_DS = 25 V, f = 1 MHz,
Reverse transfer capacitance ^{VGS = 0}
2600
- 328
72
pF
pF
pF
C_{oss eq.} ⁽²⁾
Equivalent output
capacitance
V_DS =0, V_DS = 0 to 640 V
- 187
pF
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
28
ns
V_DD = 250 V, I_D = 8.5 A,
20
ns
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 19)
-
70
ns
15
ns
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 400 V, I_D = 17 A,
V_GS = 10 V
(see Figure 20)
85 119 nC
- 15.5
nC
42
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS.
Doc ID 9118 Rev 9
5/18