STB150NF04 Datasheet, PDF (6/11 Pages) STMicroelectronics – N-channel 40 V - 0.005 Ω - 80 A - D2PAK STripFET™II Power MOSFET

Electrical characteristics
STB150NF04
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
C(pF)
HV42420
9000
f=1MHz
VGS=0
8000
7000
6000
5000
4000
Ciss
3000
2000
Coss
1000
Crss
0
0 5 10 15 20 25 30 VDS(V)
Figure 10.
VGS(th)
(norm)
Normalized gate threshold voltage
vs temperature
HV42410
VDS=VGS
ID=250µA
Figure 11.
Normalized on resistance vs
temperature
1.00
0.90
0.80
0.70
0.60
-75 -50 -25 0 25 50 75 100 125 150 175 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
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