STB150NF04 Datasheet, PDF (2/11 Pages) STMicroelectronics – N-channel 40 V - 0.005 Ω - 80 A - D2PAK STripFET™II Power MOSFET

Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_GS
I_D(1)
I_D ⁽¹⁾
I_DM(2)
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_tot
Total dissipation at T_C = 25 °C
Derating factor
dv/dt ⁽³⁾ Peak diode recovery voltage slope
E_AS ⁽⁴⁾ Single pulse avalanche energy
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 80A, di/dt ≤ 300A/µs, V_DD=80%V_(BR)DSS
4. Starting Tj = 25 °C, I_D=40 A, V_DD=30 V
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb ⁽¹⁾ Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz of Cu
STB150NF04
Value
40
± 20
80
80
320
300
2
2
0.6
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
J
°C
Value
0.5
35
Unit
°C/W
°C/W
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