PD54003-E Datasheet, PDF (6/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Typical performance
4
Typical performance
PD54003-E, PD54003S-E
Figure 2. Capacitance vs. drain voltage
Figure 3. Drain current vs. gate voltage
1000
f = 1 M Hz
100
10
4
3
Ciss
Coss
2
1
Crss
1
0
5
10
VDD, DRAIN VOLTAGE (V)
Figure 4. Gate-source voltage vs. case
temperature
0
15
1
Vds = 10 V
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V)
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-25
Vds= 10 V
ID = 1.5 A
ID = 2A
ID = 1 A
ID = 0.5 A
ID = 0.25 A
0
25
50
75
100
Tc, CASE TEMPERATURE (°C)
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