PD54003-E Datasheet, PDF (1/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

PD54003-E
PD54003S-E
RF POWER transistor, LDMOST plastic family
N-channel enhancement-mode, lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 3W with 12dB gain @ 500MHz
■ New RF plastic package
Description
The PD54003 is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7V in common source mode at
frequencies of up to 1GHz.
The PD54003 features the excellent gain, linearity
and reliability of ST’s latest LDMOS technology,
the PowerSO-10RF. The superior linearity
performance makes it an ideal solution for
portable radios.
The PowerSO-10RF is the first true Surface-
mount Device (SMD) plastic RF power package. It
is based on the highly reliable PowerSO-10, the
first ST-originated, JEDEC-approved, high-power
SMD package.
It has been optimized specifically for RF
requirements, and offers excellent RF
performance as well as ease of assembly.
Surface-mount recommendations are available in
Application Note AN1294 (see www.st.com/rf).
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Gate
Drain
Order codes
Part number
PD54003-E
PD54003S-E
PD54003TR-E
PD54003STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
March 2006
Rev 1
1/28
www.st.com
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