M25P10 Datasheet, PDF (6/21 Pages) STMicroelectronics – 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface

M25P10
Table 6. Instruction Set
Instruc
tion
Description
Instruction
Format
WREN Set Write Enable Latch
0000 0110
WRDI Reset Write Enable Latch
0000 0100
RDSR Read Status Register
0000 0101
WRSR Write Status Register
0000 0001
READ Read Data from Memory Array 0000 0011
PP
Program up to 128 Data bytes
to Memory Array
0000 0010
SE
Sector Erase (set to FFh) one
sector of Memory Array
1101 1000
BE
Bulk Erase (set to FFh) whole
of Memory Array
1100 0111
DP
Enter Deep Power-down mode 1011 1001
RES
Release from Deep Power-
down mode, and Read
Electronic Signature
1010 1011
operation, a one-byte instruction code must be
sent to the chip. This code is entered via the data
input (D), and latched on the rising edge of the
clock input (C). To enter an instruction code, the
device must have been previously selected (S =
low). Table 6 shows the available instruction set.
At Power-up and Power-down, the device must
not be selected (that is the S input must follow the
voltage applied on the V_CC pin) until the supply
voltage reaches the correct V_CC values which are
V_CC(min) at Power-up and V_SS at Power-down (a
simple pull-up resistor on S insures safe and
proper power up and down phases).
Read Data Byte(s) (READ)
The device is first selected by putting S low. The
Read instruction byte is followed by a three bytes
address (A23-A0), each bit being latched-in during
the rising edge of the clock (C). Then the data
stored in the memory at the selected byte address
is shifted out on the Q output pin, each bit being
shifted out during the falling edge of the clock (C).
The first byte addressed can be any byte within a
page. The address is automatically incremented to
the next higher address after each byte of data is
shifted out. The whole memory can therefore be
read with a single Read instruction. When the
highest address is reached, the address counter
rolls over to 000000h allowing the read cycle to be
continued indefinitely.
The Read operation is terminated by deselecting
the chip. The chip can be deselected at any time
during data output. Any read attempt during an
Erase, Program or Write Status Register cycle will
be rejected and will deselect the chip without
having any effects on the ongoing operation.
The timing sequence is shown in Figure 11.
Page Program (PP)
Prior to any Page Program attempt, a write enable
instruction (WREN) must have been previously
sent (the S input driven low, WREN instruction
properly transmitted and the S input driven high).
After the WREN instruction decoding, the memory
sets the Write Enable Latch (WEL) which allows
the execution of any further Page Program
instruction. The Page Program instruction is
entered by driving the Chip select input (S) low,
followed by the instruction byte, 3 address bytes
and at least 1 data byte on Data In input (D). If the
least significant address bits differ from [A6-
A0]=000.0000, all transmitted data exceeding the
addressed page boundary will roll over and will be
programmed from address [A6-A0]=000.0000 of
this same page. The Chip Select input (S) must be
driven low for the entire duration of the sequence.
Figure 7. WREN: Set Write Enable Latch Sequence
S
01234567
C
INSTRUCTION
D
HIGH IMPEDANCE
Q
AI02281B
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