ESDAXXSCX Datasheet, PDF (6/10 Pages) STMicroelectronics – QUAD TRANSIL™ ARRAY FOR ESD PROTECTION

ESDAxxSCx
To have a good approximation of the remaining voltages at both VI/O side, we provide the typical dynam-
ical resistance value Rd. By taking into account the following hypothesis :
we have:
R_g > R_d and R_load > R_d
we have:
V_output=
V_BR
+
R_d
×
-^V----^g-
R_g
The results of the calculation done for V_g = 8 kV, R_g = 330 Ω (IEC61000-4-2 standard), V_BR = 19 V (typ.)
and R_d = 0.80 Ω (typ.) give:
V_ouput = 38.4 V
This confirms the very low remaining voltage across the device to be protected. It is also important to note
that in this approximation the parasitic inductance effect was not taken into account. This could be a few
tenths of volts during a few nanoseconds at the output side.
Figure 12: Ordering information scheme
ESD Array
Breakdown Voltage (min)
6V1 = 6.1 Volt
Package
SC5 = SOT23-5L
SC6 = SOT23-6L
ESDA 6V1 SC6
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