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STM32F101XF Datasheet, PDF (58/117 Pages) STMicroelectronics – Single-cycle multiplication and hardware division
Electrical characteristics
STM32F101xF, STM32F101xG
Figure 19. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms
)60&B1(
)60&B12(
W Y 12(B1(
WZ 1(
W Z 12(
W K 1(B12(
Note:
)60&B1:(
)60&B$>@
)60&B1%/>@
WY $B1(
WY %/B1(
$GGUHVV
W K $B12(
W K %/B12(
)60&B'>@
)60&B1$'9 
W Y 1$'9B1(
WZ 1$'9
WVX 'DWDB12(
WVX 'DWDB1(
'DWD
W K 'DWDB1(
WK 'DWDB12(
1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.
FSMC_BusTurnAroundDuration = 0.
069
Table 31. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1) (2)
Symbol
Parameter
Min
Max
Unit
tw(NE) FSMC_NE low time
5tHCLK + 0.5 5tHCLK + 2
ns
tv(NOE_NE) FSMC_NEx low to FSMC_NOE low
0.5
1.5
ns
tw(NOE) FSMC_NOE low time
5tHCLK – 1
5tHCLK + 1
ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time
0
-
ns
tv(A_NE) FSMC_NEx low to FSMC_A valid
-
3
ns
th(A_NOE) Address hold time after FSMC_NOE high
0
-
ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid
-
0
ns
th(BL_NOE) FSMC_BL hold time after FSMC_NOE high
0.5
-
ns
tsu(Data_NE) Data to FSMC_NEx high setup time
2tHCLK - 1
-
ns
tsu(Data_NOE) Data to FSMC_NOEx high setup time
2tHCLK - 1
-
ns
th(Data_NOE) Data hold time after FSMC_NOE high
0
-
ns
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