STM32F070CB Datasheet, PDF (54/83 Pages) STMicroelectronics – Reset and power management

Electrical characteristics
STM32F070CB/RB/C6/F6
Table 42. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages
V_ESD(HBM)
Electrostatic discharge voltage
(human body model)
T_A = +25 °C, conforming
to JESD22-A114
All
V_ESD(CDM)
Electrostatic discharge voltage
(charge device model)
T_A = +25 °C, conforming
to ANSI/ESD STM5.3.1
All
1. Data based on characterization results, not tested in production.
Class
2
C4
Maximum
value⁽¹⁾
2000
500
Unit
V
V
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin.
• A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 43. Electrical sensitivities
Symbol
Parameter
Conditions
LU
Static latch-up class T_A = +105 °C conforming to JESD78A
Class
II level A
6.3.13
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below V_SS or
above V_DDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
The characterization results are given in Table 44.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
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