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M29DW128F Datasheet, PDF (53/93 Pages) STMicroelectronics – 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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M29DW128F
10 DC and AC parameters
Table 24. Device Capacitance
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
1. Sampled only, not 100% tested.
Test Condition
VIN = 0V
VOUT = 0V
Min
Max(1)
Unit
6
pF
12
pF
Table 25. DC Characteristics
Symbol
Parameter
Test Condition
Min
ILI
Input Leakage Current
ILO Output Leakage Current
ICC1(1) Supply Current (Read)
0V ≤VIN ≤VCC
0V ≤VOUT ≤VCC
E = VIL, G = VIH,
f = 6MHz
ICC2 Supply Current (Standby)
ICC3(1)(2)
Supply Current (Program/
Erase)
VIL
VIH
VPPH
Input Low Voltage
Input High Voltage
Voltage for VPP/WP Program
Acceleration
E = VCC ±0.2V,
RP = VCC ±0.2V
Program/Erase
Controller active
VPP/WP =
VIL or VIH
VPP/WP =
VPPH
VCC = 2.7V ±10%
–0.5
0.7VCC
11.5
IPP
Current for VPP/WP Program
Acceleration
VCC =2.7V ±10%
VOL
VOH
VID
VLKO
Output Low Voltage
Output High Voltage
Identification Voltage
Program/Erase Lockout
Supply Voltage
IOL = 1.8mA
IOH = –100µA
VCC –0.4
11.5
1.8
1. In Dual operations the Supply Current will be the sum of ICC1(read) and ICC3 (program/erase).
2. Sampled only, not 100% tested.
Max
±1
±1
10
100
20
20
0.8
VCC +0.3
12.5
15
0.45
12.5
2.3
Unit
µA
µA
mA
µA
mA
mA
V
V
V
mA
V
V
V
V
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