M29DW128F Datasheet, PDF (1/93 Pages) STMicroelectronics – 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

M29DW128F
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
3V Supply, Flash Memory
PRELIMINARY DATA
Features summary
■ Supply Voltage
– V_CC = 2.7V to 3.6V for Program, Erase and
Read
– V_CCQ= 1.65V to 3.6V for Input/Output
– V_PP =12V for Fast Program (optional)
■ ASYNCHRONOUS RANDOM/PAGE READ
– Page Width: 8 Words
– Page Access: 25, 30ns
– Random Access: 60, 70ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
– 32-Word Write Buffer
■ ERASE VERIFY
■ MEMORY BLOCKS
– Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
– Parameter Blocks (at Top and Bottom)
■ DUAL OPERATIONS
– While Program or Erase in one bank, Read
in any of the other banks
■ PROGRAM/ ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM
– Faster Production/Batch Programming
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
TSOP56 (NF)
14 x 20mm
BGA
TBGA64 (ZA)
10 x 13mm
■ HARDWARE BLOCK PROTECTION
– V_PP/WP Pin for fast program and write
protect of the four outermost parameter
blocks
■ SECURITY FEATURES
– Standard Protection
– Password Protection
■ EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2220h + 2200h
■ ECOPACK^® PACKAGES AVAILABLE
August 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev 1.0
1/93
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