STM32F100X4 Datasheet, PDF (51/84 Pages) STMicroelectronics – Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T_A = –40 to 105 °C unless otherwise specified.
Table 27. Flash memory characteristics
Symbol
Parameter
Conditions
Min⁽¹⁾ Typ Max⁽¹⁾ Unit
t_prog 16-bit programming time
T_A–40 to +105 °C
40 52.5 70 µs
t_ERASE Page (1 KB) erase time
T_A –40 to +105 °C
20
40 ms
t_ME Mass erase time
T_A –40 to +105 °C
20
40 ms
Read mode
f_HCLK = 24 MHz, V_DD = 3.3 V
20 mA
I_DD Supply current
Write / Erase modes
f_HCLK = 24 MHz, V_DD = 3.3 V
5 mA
Power-down mode / Halt,
V_DD = 3.0 to 3.6 V
50 µA
V_prog Programming voltage
2
3.6
V
1. Guaranteed by design, not tested in production.
Table 28. Flash memory endurance and data retention
Symbol Parameter
Conditions
Value
Min⁽¹⁾ Typ
N_END Endurance
T_A = –40 to +85 °C (6 suffix versions)
T_A = –40 to +105 °C (7 suffix versions)
10
1 kcycle⁽²⁾ at T_A = 85 °C
30
t_RET Data retention 1 kcycle⁽²⁾ at T_A = 105 °C
10
10 kcycles⁽²⁾ at T_A = 55 °C
20
1. Based on characterization not tested in production.
2. Cycling performed over the whole temperature range.
Max
Unit
kcycles
Years
Doc ID 16455 Rev 2
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