STM32F100X4 Datasheet, PDF (49/84 Pages) STMicroelectronics – Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
5.3.7
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and V_DD supply voltage conditions summarized in Table 8.
High-speed internal (HSI) RC oscillator
Table 23. HSI oscillator characteristics⁽¹⁾⁽²⁾
Symbol
Parameter
Conditions
Min Typ Max Unit
f_HSI Frequency
8
T_A = –40 to 105 °C –2.7
ACC_HSI Accuracy of HSI oscillator
T_A = –10 to 85 °C
–2
T_A = 0 to 70 °C
–2
T_A = 25 °C
–0.7
t_su(HSI) HSI oscillator startup time
1
I_DD(HSI) HSI oscillator power consumption
80
1. Guaranteed by design, not tested in production.
2. V_DD = 3.3 V, T_A = –40 to 105 °C °C unless otherwise specified.
MHz
3
%
2.5
%
2.5
%
1
%
2
µs
100 µA
Low-speed internal (LSI) RC oscillator
Table 24. LSI oscillator characteristics ⁽¹⁾
Symbol
Parameter
Min
f_LSI
Frequency
30
t_su(LSI)(2) LSI oscillator startup time
I_DD(LSI)(2) LSI oscillator power consumption
1. V_DD = 3 V, T_A = –40 to 105 °C °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
Typ
40
0.65
Max
Unit
60
kHz
85
µs
1.2
µA
Wakeup time from low-power mode
The wakeup times given in Table 25 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
● Stop or Standby mode: the clock source is the RC oscillator
● Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under the ambient temperature and V_DD supply
voltage conditions summarized in Table 8.
Table 25. Low-power mode wakeup timings
Symbol
Parameter
t_WUSLEEP(1)
Wakeup from Sleep mode
Typ
Unit
1.8
µs
Doc ID 16455 Rev 2
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