M29DW128F_06 Datasheet, PDF (51/94 Pages) STMicroelectronics – 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

M29DW128F
Status Register
Table 19. Status Register bits⁽¹⁾⁽²⁾
Operation
Address
DQ7 DQ6
DQ5 DQ3
DQ2
DQ1 RB
Program
Bank Address
DQ7 Toggle
0
–
–
0
0
Program During Erase
Suspend
Bank Address
DQ7 Toggle
0
–
–
–
0
Write to Buffer and
Program Abort
Bank Address
DQ7 Toggle
0
–
–
1
0
Program Error
Bank Address
DQ7 Toggle
1
–
–
– Hi-Z
Chip Erase
Any Address
0
Toggle
0
1
Toggle
–
0
Block Erase before
timeout
Erasing Block
0
Toggle
0
Non-Erasing Block
0
Toggle
0
0
Toggle
–
0
0 No Toggle –
0
Block Erase
Erasing Block
0
Toggle
0
Non-Erasing Block
0
Toggle
0
1
Toggle
–
0
1 No Toggle –
0
Erase Suspend
Erasing Block
Non-Erasing Block
1 No Toggle 0
–
Data read as normal
Toggle
– Hi-Z
– Hi-Z
Erase Error
Good Block Address 0
Toggle
1
Faulty Block Address 0
Toggle
1
1 No Toggle – Hi-Z
1
Toggle
– Hi-Z
1. Unspecified data bits should be ignored.
2. Figure 16 and Figure 17 describe Toggle and Alternative Toggle bits timing waveforms.
Figure 8. Data Polling flowchart
START
READ DQ5 & DQ7
at VALID ADDRESS
DQ7
=
DATA
NO
YES
NO
DQ5 = 1
YES
READ DQ7
at VALID ADDRESS
DQ7
=
DATA
NO
YES
FAIL
PASS
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