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M29DW128F_06 Datasheet, PDF (1/94 Pages) STMicroelectronics – 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory | |||
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M29DW128F
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
3V supply Flash memory
Feature summary
â Supply voltage
â VCC = 2.7V to 3.6V for Program, Erase and
Read
â VPP =12V for Fast Program (optional)
â Asynchronous Random/Page Read
â Page width: 8 Words
â Page access: 25, 30ns
â Random access: 60, 70ns
â Programming time
â 10µs per Byte/Word typical
â 4 Words / 8 Bytes Program
â 32-Word Write Buffer
â Erase Verify
â Memory blocks
â Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
â Parameter Blocks (at Top and Bottom)
â Dual Operation
â While Program or Erase in one bank, Read
in any of the other banks
â Program/Erase Suspend and Resume modes
â Read from any Block during Program
Suspend
â Read and Program another Block during
Erase Suspend
â Unlock Bypass Program
â Faster Production/Batch Programming
â Common Flash Interface
â 64 bit Security Code
â 100,000 Program/Erase cycles per block
TSOP56 (NF)
14 x 20mm
BGA
TBGA64 (ZA)
10 x 13mm
â Low power consumption
â Standby and Automatic Standby
â Hardware Block Protection
â VPP/WP Pin for fast program and write
protect of the four outermost parameter
blocks
â Security features
â Standard Protection
â Password Protection
â Extended Memory Block
â Extra block used as security block or to
store additional information
â Electronic Signature
â Manufacturer Code: 0020h
â Device Code: 227Eh + 2220h + 2200h
â ECOPACK® packages available
October 2006
Rev 7
1/94
www.st.com
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