TL081_08 Datasheet, PDF (5/15 Pages) STMicroelectronics – General purpose JFET single operational amplifiers

TL081
Electrical characteristics
Table 3. V_CC = ±15V, T_amb = +25°C (unless otherwise specified) (continued)
Symbol
Parameter
TL081I, AC, AI, BC,
BI
TL081C
Unit
Min. Typ. Max. Min. Typ. Max.
t_r
K_ov
GBP
R_i
THD
e_n
∅m
Rise time (T_amb = +25°C)
0.1
V_in = 20mV, R_L = 2kΩ, C_L = 100pF, unity gain
Overshoot (T_amb = +25°C)
10
V_in = 20mV, R_L = 2kΩ, C_L = 100pF, unity gain
Gain bandwidth product (T_amb = +25°C)
2.5 4
V_in = 10mV, R_L = 2kΩ, C_L = 100pF, F= 100kHz
Input resistance
10¹²
Total harmonic distortion (T_amb = +25°C),
F= 1kHz, R_L = 2kΩ,C_L = 100pF, A_v = 20dB,
V_o = 2V_pp
0.01
Equivalent input noise voltage
15
R_S = 100Ω, F= 1kHz
Phase margin
45
0.1
10
2.5 4
10¹²
0.01
15
45
µs
%
MHz
Ω
%
---n---V-----
Hz
degrees
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
temperature.
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