STW90NF20 Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™ Power MOSFET

STW90NF20
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min. Typ. Max. Unit
V_DD = 100 V, I_D = 41.5 A
24
138
ns
ns
R_G = 4.7 Ω, V_GS = 10 V,
148
ns
(see Figure 14)
142
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM(1)
Source-drain current
Source-drain current (pulsed)
V_SD(2) Forward on voltage
I_SD = 83 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 83 A,V_DD = 100 V
di/dt = 100 A/µs
(see Figure 19)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =83 A, V_DD = 100 V
di/dt = 100 A/µs
T_j = 150°C (see Figure 19)
1. Pulse with limited by maximum temperature
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
83 A
332 A
1.6 V
200
ns
1.6
µC
16
A
235
ns
2.2
µC
18
A
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