STW90NF20 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™ Power MOSFET

STW90NF20
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM(1)
P_TOT
dv/dt ⁽²⁾
T_J
Tstg
Drain-source voltage (V_GS = 0)
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Derating factor
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 83 A, di/dt ≤ 400 A/µs, V_DD ≤ 80% V_(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
R_thj-case
R_thj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_J max)
Single pulse avalanche energy
E_AS
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
Electrical ratings
Value
200
± 20
83
52
332
2.4
300
15
-50 to 150
Unit
V
V
A
A
A
W/°C
W
V/ns
°C
Value
0.42
50
300
Unit
°C/W
°C/W
°C
Max value
Unit
83
A
400
mJ
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