STW62NM60N Datasheet, PDF (5/13 Pages) STMicroelectronics – Low input capacitance and gate charge

STW62NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 65 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 65 A, di/dt = 100 A/µs
V_DD = 100 V
-
(see Figure 15)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 65 A, di/dt = 100 A/µs
V_DD = 100 V, T_j = 150 °C
-
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
65 A
260 A
1.6 V
470
ns
10
µC
45
A
570
ns
15
µC
50
A
Doc ID 018945 Rev 3
5/13