STW62NM60N Datasheet, PDF (1/13 Pages) STMicroelectronics – Low input capacitance and gate charge

STW62NM60N
Features
N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II
Power MOSFET in a TO-247 package
Datasheet − production data
Order code
STW62NM60N
V_DS
600 V
R_DS(on)
max
0.049 Ω
I_D
65 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order code
STW62NM60N
Marking
62NM60N
3
!-V
Package
TO-247
Packaging
Tube
December 2012
This is information on a product in full production.
Doc ID 018945 Rev 3
1/13
www.st.com
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