STW54NM65ND Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 650 V, 0.055 Ω, 49 A TO-247 FDmesh™ II Power MOSFET

STW54NM65ND
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 49 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 49 A, di/dt = 100 A/µs
V_DD = 60 V
-
Figure 15
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 49 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
-
Figure 15
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
49 A
196 A
1.3 V
212
ns
2
µC
19
A
296
ns
4
µC
28
A
Doc ID 018885 Rev 1
5/13