STW54NM65ND Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 650 V, 0.055 Ω, 49 A TO-247 FDmesh™ II Power MOSFET

STW54NM65ND
N-channel 650 V, 0.055 Ω, 49 A TO-247
FDmesh™ II Power MOSFET (with fast diode)
Features
Order code
V_DSS
(@Tjmax)
STW54NM65ND 710 V
R_DS(on)
max.
< 0.065 Ω
I_D
49 A
■ The worldwide best R_DS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode. It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
Marking
STW54NM65ND
54NM65ND
Package
TO-247
Packaging
Tube
June 2011
Doc ID 018885 Rev 1
1/13
www.st.com
13